Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
スポンサーリンク
概要
- 論文の詳細を見る
In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess width to improve the breakdown and RF characteristics. The modified channel consists of the InxGa1-xAs and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27%, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30% compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.
- （社）電子情報通信学会の論文
- 2008-05-01
著者
-
Choi Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
HAN Min
Millimeter-Wave INnovation Technology research center (MINT)
-
Han Min
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Rhee Jin
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Oh Jung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint)
-
Bang Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
BAEK Young
Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University
-
Beak Young
Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
関連論文
- 94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Silicon devices and materials)
- 94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Electron devices)
- 94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
- 94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
- Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic : HEMTs for the Millimeter-wave Applications (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
- Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
- W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
- Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
- The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
- Fabrication of low loss transmission line with Surface micromachining technology(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Fabrication of low loss transmission line with Surface micromachining technology (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Analysis of characteristics of PHEMT's fabricated by gate recess methods
- Analysis of characteristics of PHEMT's fabricated by gate recess methods
- Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor(Compound Semiconductor Devices,Fundamental and Applicat
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
- Development of GaAs Gunn diodes and their applications to frequency modulated continuous wave radar
- Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor
- RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
- RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)
- The low conversion loss and LO power V-band MIMIC Up-mixer(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- The low conversion loss and LO power V-band MIMIC Up-mixer(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- V-band CPW Medium Power Amplifier for 60 GHz Wireless LAN application(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- V-band CPW Medium Power Amplifier for 60 GHz Wireless LAN application(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
- Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Electrical Characteristics of the 0.1μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
- Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
- Simulation of sub-0.1μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Simulation of sub-0.1 μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Design and Fabrication of Planar GaAs Gunn Diodes
- Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
- Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width
- The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
- Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor