94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Silicon devices and materials)

スポンサーリンク

概要

論文の詳細を見る
2010-06-30

著者

関連論文

94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Silicon devices and materials)
94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Electron devices)
94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic : HEMTs for the Millimeter-wave Applications (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
Fabrication of low loss transmission line with Surface micromachining technology(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Fabrication of low loss transmission line with Surface micromachining technology (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
Development of GaAs Gunn diodes and their applications to frequency modulated continuous wave radar
Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor
RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)
V-band CPW Medium Power Amplifier for 60 GHz Wireless LAN application(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
V-band CPW Medium Power Amplifier for 60 GHz Wireless LAN application(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
Electrical Characteristics of the 0.1μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
Simulation of sub-0.1μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Design and Fabrication of Planar GaAs Gunn Diodes
Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width
The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor

もっと見る

スポンサーリンク