Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the optimization of gate recess width to improve the breakdown characteristics. The modified channel consists of the In_xGa_<1-x>As and the InP layers. Since InP has lower impact ionization coefficient than In_<0.53>Ga_<0.47>As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT, and we have analyzed the measurement results of the fabricated devices.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Choi Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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HAN Min
Millimeter-Wave INnovation Technology research center (MINT)
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Han Min
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Rhee Jin
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Oh Jung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Bang Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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BAEK Young
Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University
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Beak Young
Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
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