Analysis of characteristics of PHEMT's fabricated by gate recess methods

概要

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In this study, the characteristics of the fabricated PHEMT's by various gate recess methods were compared. PHEMT's were fabricated by using the wide single recess, narrow single recess, and double recess methods. From the measured results of the fabricated PHEMT's, the narrow single recessed PHEMT's show the best DC characteristics among them with transconductance of 522.4ms/mm among them, but RF characteristics of double recessed PHEMT are superior to those of the other PHEMT's i. e. f_γ of 120 GHz and f_<max> of 210 GHz, respectively. For detailed analysis of the double recessed PHEMT's, we have fabricated PHEMT's with various wide recess depth and measured DC and RF characteristics. From the measured results, we obtained that RF characteristics increased until etch depth of 60 % of cap layer and then decreased. When wide recess depth is 60 % of cap layer, we obtained gm of 457.3 mS/mm, breakdown voltage of 11 V, f_γ of 124 GHz, f_<max> of 220 GHz and S_<21> gain of 5.4 dB at 50GHz, respectively.
社団法人電子情報通信学会の論文
2002-06-25