ED2000-64 / SDM2000-64 Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films

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概要

• 論文の詳細を見る

• We investigated the changes in the characteristics of silicon nitride thin films, and GaAs PHMETs passivated with the films, as a function of the helium (He) gas flow rate during the PECVD process. FTIR spectrum of the films showed reduced IR-absorption peaks of the Si-N bond (830 nm), as well as those of the Si-H (2170 nm) and Si-N-H (1180 nm) bonds, as the flow rate of He was increased from 0 to 100 sccm. The drain saturation current of GaAs PHEMTs passivated with these SiN films increased by 14% compared with non-passivated devices. However, the flow rate of He showed minimal effects on the saturation current.

• 社団法人電子情報通信学会の論文
• 2000-06-22

著者

• Lee Seong

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• Lee S.D.

  Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering,

• Rhee J.K.

  Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering,

• Lee S.d.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Rhee J.k.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Park H.C.

  Millimeter-wave INnovation Technology research center(MINT), Dongguk University

• Park H.c.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Shin J.W.

  Millimeter-wave Innovation Technology research center, Dongguk University

• Yoon Y.S.

  Millimeter-wave Innovation Technology research center, Dongguk University

• Yoon Y.s.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Shin J.w.

  Millimeter-wave Innovation Technology Research Center Dongguk University

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• ED2000-64 / SDM2000-64 Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films
• ED2000-64 / SDM2000-64 Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films

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