ED2000-64 / SDM2000-64 Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films

概要

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We investigated the changes in the characteristics of silicon nitride thin films, and GaAs PHMETs passivated with the films, as a function of the helium (He) gas flow rate during the PECVD process. FTIR spectrum of the films showed reduced IR-absorption peaks of the Si-N bond (830 nm), as well as those of the Si-H (2170 nm) and Si-N-H (1180 nm) bonds, as the flow rate of He was increased from 0 to 100 sccm. The drain saturation current of GaAs PHEMTs passivated with these SiN films increased by 14% compared with non-passivated devices. However, the flow rate of He showed minimal effects on the saturation current.
社団法人電子情報通信学会の論文
2000-06-22