Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor(Compound Semiconductor Devices,<Special Section>Fundamental and Applicat
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概要
- 論文の詳細を見る
To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility-transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the InAlAs/InGaAs/InP structure. Compared with the conventional MHEMT, the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S_<21> gain of approximately 4.35dB at 50GHz, and a cut-off frequency (f_T) and a maximum frequency of oscillation (f_<max>) of approximately 124GHz and 240GHz, respectively, were obtained. These are due to decreases in g_o and g_m.
- 社団法人電子情報通信学会の論文
- 2006-05-01
著者
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Choi Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Rhee Jin
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Shin Dong
Dongguk University
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Oh Jung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Kim Sam
Dongguk University
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Lee Bok
Dongguk University
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CHOI Seok
Dongguk University
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OH Jung
Dongguk University
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LIM Byeong
Dongguk University
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MOON Sung
Dongguk University
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RHEE Jin
Dongguk University
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- Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor(Compound Semiconductor Devices,Fundamental and Applicat
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- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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