Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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概要
- 論文の詳細を見る
To perform the comparative study, we experimented on two differential epitaxial structures, conventional Metamorphic High Electron Mobility Transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and InP-composite channel MHEMT adopting the InAlAs/InGaAs/InP structure. Compared to the conventional MHEMT, the InP-composite channel MHEMT shows improved breakdown performance. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite channel MHEMT than that of the conventional MHEMT. The InP-composite channel MEHMT also shows improved RF characteristics at millimeter wave frequency.
- 社団法人電子情報通信学会の論文
- 2005-06-22
著者
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Choi Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Rhee Jin
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Oh Jung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Kim Sam
Dongguk University
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Kim Sam
Millimeter-wave Innovation Technology Research Center(mint) Dongguk University
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Lee Bok
Dongguk University
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LIM Byeong
Dongguk University
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Lee Bok
Millimeter-wave INnovation Technology research center (MINT), Dongguk University
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Lim Byeong
Millimeter-wave INnovation Technology research center (MINT), Dongguk University
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- Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor(Compound Semiconductor Devices,Fundamental and Applicat
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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