Kim Sam | Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

スポンサーリンク

概要

• KIM Sam Dongの詳細を見る
• 同名の論文著者
• Millimeter-wave Innovation Technology Research Center(mint) Dongguk Universityの論文著者

関連著者

• Rhee Jin

  Millimeter-wave Innovation Technology Research Center (mint) Dongguk University

• Kim Sam

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• Choi Seok

  Millimeter-wave Innovation Technology Research Center (mint) Dongguk University

• Park H.m.

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• Lee Seong

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• Rhee J

  Dongguk Univ. Seoul Kor

• Lee S.d.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Park Hyun

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• Oh Jung

  Millimeter-wave Innovation Technology Research Center (mint) Dongguk University

• Kim Sam

  Dongguk University

• Park Hyung

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• An Dan

  Millimeter-wave INnovation Technology research center (MINT), Dongguk University

• Lee Bok

  Dongguk University

• LIM Byeong

  Dongguk University

• Lee Bok

  Millimeter-wave INnovation Technology research center (MINT), Dongguk University

• Lim Byeong

  Millimeter-wave INnovation Technology research center (MINT), Dongguk University

• An D

  Millimeter-wave Inovation Technology Research Center (mint) Dongguk Univerisity

• An Dan

  Millimeter-wave Innovation Technology Research Center(mint) Dongguk University

• An Dan

  Millimeter-wave Innovation Technology Research Center (mint) Dongguk University

もっと見る 閉じる

著作論文

• Analysis of characteristics of PHEMT's fabricated by gate recess methods
• Analysis of characteristics of PHEMT's fabricated by gate recess methods
• Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

スポンサーリンク