Oh Jung | Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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概要
- Oh Jung Hunの詳細を見る
- 同名の論文著者
- Millimeter-wave Innovation Technology Research Center (mint) Dongguk Universityの論文著者
関連著者
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Choi Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Rhee Jin
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Oh Jung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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HAN Min
Millimeter-Wave INnovation Technology research center (MINT)
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Han Min
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Kim Sam
Dongguk University
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Lee Bok
Dongguk University
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LIM Byeong
Dongguk University
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Bang Seok
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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BAEK Young
Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University
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Beak Young
Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
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Kim Sam
Millimeter-wave Innovation Technology Research Center(mint) Dongguk University
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Lee Bok
Millimeter-wave INnovation Technology research center (MINT), Dongguk University
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Lim Byeong
Millimeter-wave INnovation Technology research center (MINT), Dongguk University
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Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Shin Dong
Dongguk University
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CHOI Seok
Dongguk University
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OH Jung
Dongguk University
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MOON Sung
Dongguk University
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RHEE Jin
Dongguk University
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Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint)
著作論文
- Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor(Compound Semiconductor Devices,Fundamental and Applicat
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
- Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))