HAN Min | Millimeter-Wave INnovation Technology research center (MINT)

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著作論文

94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Silicon devices and materials)
94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Electron devices)
94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
Development of GaAs Gunn diodes and their applications to frequency modulated continuous wave radar
V-band CPW Medium Power Amplifier for 60 GHz Wireless LAN application(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
V-band CPW Medium Power Amplifier for 60 GHz Wireless LAN application(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width

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