Rhee Jin-koo | Millimeter-wave Innovation Technology Research Center (mint)

スポンサーリンク

概要

関連著者

もっと見る

著作論文

94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic : HEMTs for the Millimeter-wave Applications (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
Fabrication of low loss transmission line with Surface micromachining technology(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Fabrication of low loss transmission line with Surface micromachining technology (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)
Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
Electrical Characteristics of the 0.1μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
Simulation of sub-0.1μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Simulation of sub-0.1 μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
Design and Fabrication of Planar GaAs Gunn Diodes
Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width
The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor

もっと見る

スポンサーリンク