An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)

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概要

• 論文の詳細を見る

• The deep-level traps induced during fabrication affect significantly the performance of modulation-doped InAlAs/InGaAs metamorphic HEMTs (MHEMTs) on GaAs wafers. The dynamic behavior of traps in MHEMTs has to be more omprehensively understood for better fabrication and development of the devices for over-100-GHz millimeter-wave applications. In this work, we analyze the dynamic trap effects on the performance of MHEMTs through rigorous 2D hydrodynamic transport simulations using a commercial ISE-DESSIS simulator. The simulations give a good agreement with the measured characteristics of a fabricated MHEMT, and good insight of the dynamic behavior of the traps including the kink phenomena (the weak kink) in short-gate MHEMTs.

• 社団法人電子情報通信学会の論文
• 2004-06-23

著者

• Son Myung-Sik

  Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University

• Mizuno Koji

  Millimeter-wave Innovaiton Technology Research Center Dongguk University

• Rhee Jin-Khoo

  Millimeter-wave Innovaiton Technology REsearch Center, Dongguk University

• Rhee Jin-khoo

  Millimeter-wave Innovaiton Technology Research Center Dongguk University

• Son Myung-sik

  Millimeter-wave Innovaiton Technology Research Center Dongguk University

関連論文

• Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic : HEMTs for the Millimeter-wave Applications (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher
• Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher
• Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher
• An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
• An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
• Simulation of sub-0.1μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• Simulation of sub-0.1 μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

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