Sensitivity Characteristics of Positive and Negative Resists at 200 kV Electron-Beam Lithography

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概要

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• The contrast curve of positive and negative electron-beam resists such as polymethylmethacrylate (PMMA), ZEP520A, and hydrogen silsesquioxane (HSQ) at 200 kV electron-beam was estimated by using continuous slow down approximation (CSDA) model with both non-relativistic and relativistic Bethe stopping power. Experimental results show that simple CSDA model well explains the overall response of these various electron-beam resists to high energy electron-beam only if we use the relativistic Bethe stopping power. The difference between non-relativistic and relativistic Bethe stopping power is discussed.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2005-01-10

著者

• Kim Ki-bum

  School Of Life Sciences And Biotechnology Korea University

• Wi Jung-sub

  School Of Materials Science And Engineering And Nano Systems Institute-national Core Research Center

• Jin Kyung-bae

  School Of Materials Science And Engineering And Nano Systems Institute-national Core Research Center

• Lee Hyo-sung

  School Of Materials Science And Engineering And Nano Systems Institute-national Core Research Center

• Kim Byung-sung

  School Of Electrical And Computer Engineering Sungkyunkwan University

• Jin Kyung-Bae

  School of Materials Science and Engineering and Nano Systems Institute-National Core Research Center, Seoul National University, Seoul 151-742, Korea

• Wi Jung-Sub

  School of Materials Science and Engineering and Nano Systems Institute-National Core Research Center, Seoul National University, Seoul 151-742, Korea

• Lee Hyo-Sung

  School of Materials Science and Engineering and Nano Systems Institute-National Core Research Center, Seoul National University, Seoul 151-742, Korea

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