Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
We present an in situ surface photoabsorption (SPA)study on surface structures of (001) InP surfaces. Conventionalsubtraction spectra of SPA on (001) InP showed two peaks at 430 nmand 600 nm, which we assigned as P dimer and In dimer peaks,respectively. By modifying the conventional subtraction equation toseparate contributions from In- and P-stabilized surfaces, we couldobserve another structure at 400 nm which we interpret as related toIn-stabilized surface, showing possibility of complementary role of this modified equation. We also observed evolution of surface states from P- to In-stabilized surfaces at 600°C by the change of PH3 partial pressure.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-09-15
著者
-
Lee Tae-wan
School Of Materials Science And Engineering And Isrc Seoul National University
-
KIM Young-Dong
Department of Biology, Hallym University
-
Moon Youngboo
School of Materials Science & Engineering and ISRC, Seoul National University
-
Nakamura Fumihiko
SONY Corporation Research Center
-
Hwang Heedon
School Of Materials Science And Engineering And Isrc Seoul National University
-
Yoon Euijoon
School Of Electronic And Electrical Engineering Kyungpook National University
-
Yoon Euijoon
School of Materials Science & Engineering and ISRC, Seoul National
-
Moon Youngboo
School of Materials Science & Engineering and ISRC, Seoul National
関連論文
- Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Invited Nitride Semiconductor Nanostructures and Their Optical Properties (先端デバイスの基礎と応用に関するアジアワークショップ)
- Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr_0.3,Ti_0.7)O_3 Thin Films for the Infra-Red Sensor Devices
- Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices
- Phylogeny of Weigela and Diervilla (Caprifoliaceae) Based on Nuclear rDNA ITS Sequences:Biogegraphic and Taxonomic Implications
- Possibility of TWO-Step As-Desorption from (001) InP Using Surface Photoabsorption : Surfaces. Interfaces, and Films
- Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
- Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
- Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
- [Invited]Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- [Invited] Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition (Special Issue on Heterostructure Electron Devices)
- Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor
- InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
- Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
- Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET
- Strong Room-Temperature Near-Ultraviolet Emission from In-Rich InGaN/GaN Nanostructures Grown by Metalorganic Chemical Vapor Deposition
- Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode
- Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
- Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces