Invited Nitride Semiconductor Nanostructures and Their Optical Properties (先端デバイスの基礎と応用に関するアジアワークショップ)

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概要

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• Nanostructures of InN and InGaN were grown by MOCVD and their optical properties were investigated. With the introduction of high growth temperature, InN/GaN quantum well structure was successfully grown for the first time. Their structural properties could be controlled by growth interruption. InGaN quantum well and quantum dot structures were also grown by controlling growth temperature and In incorporation. From PL analysis, InGaN quantum dot structure showed enhanced thermal characteristics, compared with that of quantum well structure. In the case of InN/GaN quantum well structure, enhanced thermal characteristics appeared when grown without growth interruption. It is supposed that InN/GaN quantum well structure has intrinsic quantum-dot like features caused by thickness fluctuation.

• 社団法人電子情報通信学会の論文
• 2003-06-25

著者

• KIM Hyun

  School of Mechanical Engineering, Pusan National University

• YOON Euijoon

  School of Materials Science and Engineering, Seoul National University

• Yoon Eujioon

  School Of Materials Science And Engineering Seoul National University

• NA Hyunseok

  School of Materials Science and Engineering, Seoul National University

• KWON Soon-Yong

  School of Materials Science and Engineering, Seoul National University

• Na Hyunseok

  School Of Materials Science And Engineering Seoul National University

• Kwon Soon-yong

  School Of Materials Science And Engineering Seoul National University

• Kim Hyun

  School Of Materials Science And Engineering Seoul National University

• Kim Hyun

  School Of Civil Environmental And Architectural Engineering Korea University

• Yoon Euijoon

  School Of Electronic And Electrical Engineering Kyungpook National University

• Kim Hyun

  School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea

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• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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