Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-30
著者
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YOON Euijoon
School of Materials Science and Engineering, Seoul National University
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Lee J‐h
School Of Electrical Engineering And Computer Science Kyungpook National Univ.
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Lee Jong-ho
School Of Electrical Engineering Wonkwang University
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Lim Seung-hyun
School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc
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PARK Tai-su
School of Materials Science and Engineering, Seoul National University
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Park Tai-su
School Of Materials Science And Engineering Seoul National University
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Song Sukchan
School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc
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LEE Seung-Yoon
School of Materials Science and Engineering, and Inter-university Semiconductor Research Center (ISR
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LEE Gun-Do
School of Materials Science and Engineering, and Inter-university Semiconductor Research Center (ISR
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Lee Gun-do
School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc
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- Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)