Gate Workfunction Engineering of Bulk FinFETs for Sub-50nm DRAM Cell Transistors

スポンサーリンク

概要

• 論文の詳細を見る
• 2006-09-13

著者

• Kim Young

  School Of Life Science And Biotechnology Kyungpook National University

• Lee Jong-ho

  School Of Electrical Engineering Wonkwang University

• PARK Ki-Heung

  School of Electrical Engineering and Computer Science, Kyungpook National Univ.

• Lee Jong-ho

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Park Ki-heung

  School Of Eecs Kyungpook National University

• Park Ki-heung

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Kim Young

  School Of Advanced Materials Science And Engineering Sungkyunkwan Univ.

• Kim Young

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Han Kyoung

  School Of Eecs Kyungpook National University

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Lee Jong-Ho

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

関連論文

• 1P4-28 液体金属中の溶質クラスターの超音波による均一分散(ポスターセッション)
• Ferromagnetism in Fe doped ZnO synthesized by co-precipitation method
• Study on structural, magnetic and transport properties of La_Ca_Mn_Co_xO_3 (x = 0.01-0.05) thin films
• GTRI-BB, a New Cytotoxic Isochromanquinone Produced by Micromonospora sp. SA-246
• A comparison of gene expression profiles between primary human AML cells and AML cell line
• 1Pa-45 超音波メルト処理によるグレインの改質に対する処理時間と溶液濃度の効果(ポスターセッション)
• 2-bit/cell Characteristics of High-Density and High-Performance SONOS Flash Memory Cell with Recessed Channel Structure
• Device Design Consideration for 50nm Dynamic Random Access Memory Using Bulk FinFET
• Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
• Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)
• Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)
• Feature Compensation with Model-Based Estimation for Noise Masking(Speech and Hearing)
• Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
• Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
• MODELING THE MIXING OF WASTEWATER EFFLUENT DISCHARGED FROM OCEAN OUTFALLS USING A HYBRID MODEL
• Time-Varying Body Instability and Low-Frequency Noise Characteristics of Mini-Field-Dual-Body Silicon-on-Insulator Structure for Analog-Digital Mixed-Mode Circuits
• AC Floating Body Effects and 1/f Noise Characteristics of Dual Body SOI Structure for Analog-Digital Mixed Mode Circuit
• A26 Numerical Simulation of Tennis Ball Impact
• Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
• [Invited]Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• [Invited] Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Frequency Agile Microstrip Patch Antenna Using Piezoelectric Substrates : Electrical Properties of Condensed Matter
• Flow Characteristics of a Plane Jet with an Extended Lip-Plate and Serrated Tabs
• Phenology of the rhodomelarian algae Neorhodomela aculeata and Ceramium kondoi and their survival strategies against herbivorous snails
• 2P8-2 強力超音波によるアルミ合金の核生成の促進(ポスターセッション)
• Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006)
• Gate Workfunction Engineering of Bulk FinFETs for Sub-50nm DRAM Cell Transistors
• Improvement of the Light Extraction Efficiency in n-ZnO:Ga/p-Si Heterojunction Light Emitting Diodes by a SiO2 Current-Blocking Layer
• Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor
• Flash Memory Device with ‘I’ Shape Floating Gate for Sub-70 nm NAND Flash Memory
• Device Design of p+/n+ and n+/p+/n+ Gate Bulk Fin Field Effect Transistors with Source/Drain to Gate Underlap for Sub-40 nm Dynamic Random Access Memory Cell Transistors
• Microstructure Evaluation of Friction Stir Welded AZ91 with CaO Mg Alloy
• Device design of SONOS flash memory cell with saddle type channel structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Device design of SONOS flash memory cell with saddle type channel structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006)
• SEXUAL MATURATION AND SPAWNING OF THE HARD CLAM, Meretrix lusoria, ON THE WEST COAST OF KOREA
• Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function
• Influence of Growth Temperature on the Characteristics of Ga-Doped ZnO Thin Films Deposited by Magnetron Sputtering
• 3Pa4-12 溶接Al合金A390の強力超音波照射による微細化の進展(ポスターセッション)
• Effects of Body Doping in a NAND Flash String without Source/Drain
• NAND Flash Memory String with Localized Buried Oxide Layer
• Current Model of Fully Depleted Nanoscale Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel in All Operation Regions
• AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact (Special Issue : Advanced Electromaterials)
• Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates
• Multiuser Distortion Management Scheme for H.264 Video Transmission in OFDM Systems
• Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
• Nonsense-Mediated mRNA Decay Factors, UPF1 and UPF3, Contribute to Plant Defense
• Threshold-Voltage Modeling of Bulk Fin Field Transistors by Considering Surface Potential Lowering
• Nucleation Enhancement of Al Alloys by High Intensity Ultrasound
• Enhancement of Temperature Sensitivity for Metal--Insulator--Semiconductor Temperature Sensors by Using Bi2Mg2/3Nb4/3O7 Film
• Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
• Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET
• Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias
• Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions
• Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure
• Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
• Length Effect of Spacer-Type Storage Node in High-Density 2-bit/Cell Silicon–Oxide–Nitride–Oxide–Silicon NOR Flash Cell Based on Recessed Channel Structure
• Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory
• Comparative Study of p+/n+ Gate Modified Saddle Metal Oxide Semiconductor Field Effect Transistors and p+/n+ Gate Bulk Fin Field Effect Transistors for Sub-40 nm Dynamic Random Access Memory Cell Transistors
• Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory
• Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory (Special Issue : Microprocesses and Nanotechnology)
• Failure Pressure Assessment of the Circumferentially Flawed Heat Exchanger Tubes
• Two-Bit/Cell Characteristics of Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Devices with Recessed Channel Structure
• Compact Current Modeling of Fully Depleted Symmetric Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Doped Short-Channel

もっと見る 閉じる

スポンサーリンク