AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact (Special Issue : Advanced Electromaterials)
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概要
著者
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Han Min
School Of Electrical Engineering Seoul National University
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Kim Min
School Of Mechanical And Aerospace Engineering Seoul National University
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Kim Young
School Of Advanced Materials Science And Engineering Sungkyunkwan Univ.
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Ha Min
Korea Electronics Technology Institute, Seongnam, Gyeonggi 462-816, Korea
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