[Invited] High Performance Poly-silicon TFT by Excimer Laser Annealing (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

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概要

• 論文の詳細を見る

• We have proposed and fabricated high performance poly-Si TFTs. The counter-doped LET effectively collects the hole carriers generated by impact ionization, so that the kink current is considerably reduced. The fabrication process is compatible with the conventional low-temperature CMOS poly-Si process without any additional mask step required. We have also fabricated high mobility poly-Si TFT by a simple ELA method. The proposed ELA method can produce large lateral grains exceeding a few micrometer employing a selectively floating a-Si thin film structure. The fabricated poly-Si TFT exhibits high field effect mobility exceeding 300cm^2/Vs.

• 社団法人電子情報通信学会の論文
• 2003-06-23

著者

• Han Min

  School Of Electrical Engineering Seoul National University

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• [Invited]High Performance Poly-silicon TFT by Excimer Laser Annealing(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
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