G201 VAPOR-LIQUID EQUILIBRIUM OF DIFLUOROMETHANE (R-32) + PROPANE (R-290) SYSTEM IN THE TEMPERATURE RANGE OF 293-313 K(Thermophysical properties)
スポンサーリンク
概要
- 論文の詳細を見る
Isothermal vapor-liquid equilibrium (VLB) data have been measured for the systems of difluoromethane (HFC-32)+propane (HC-290) system in the temperature range of 293-313 K. An apparatus for the measurement of vapor-liquid equilibrium data was designed as a circulation type apparatus by injecting vapor through liquid pool using a magnetic pump. The experiment was performed to measure temperature, pressure, liquid and vapor compositions of the refrigerant mixture. The experimental results were correlated with the Margules equation with four adjusting parameters, and the absolute average deviation of bubble-point pressure for HFC-32 + HC-290 system from the Margules equation was 0.35%. Also the absolute average deviation for the dew-point composition for HFC-32 + HC-290 system was 0.045 mole fraction for the temperature range investigated. The refrigerant mixture forms an azeotrope near the mole fraction of 0.7 of R-32.
- 一般社団法人日本機械学会の論文
- 2000-10-01
著者
-
Kim Young
Thermal
-
Kim Min
School Of Mechanical And Aerospace Engineering Seoul National University
-
Park Han
School of Mechanical and Aerospace Engineering, Seoul National University
-
Kim Woo
School of Mechanical and Aerospace Engineering, Seoul National University
-
Park Han
School Of Mechanical And Aerospace Engineering Seoul National University
-
Kim Woo
School Of Mechanical And Aerospace Engineering Seoul National University
-
Kim Woo
School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Republic of Korea
関連論文
- G201 VAPOR-LIQUID EQUILIBRIUM OF DIFLUOROMETHANE (R-32) + PROPANE (R-290) SYSTEM IN THE TEMPERATURE RANGE OF 293-313 K(Thermophysical properties)
- Photoluminescence Studies of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Molecular Beam Epitaxy
- Efficient Hole Injection for Top-Emitting Organic Light-Emitting Diodes Using Nickel Oxide by Oxygen Plasma Treatment
- AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact (Special Issue : Advanced Electromaterials)
- Computational Fluid Dynamics Modeling of Mono-Silane Siemens Reactor