NAND Flash Memory String with Localized Buried Oxide Layer

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概要

• 論文の詳細を見る

• A cell structure without a source/drain (S/D) could be very promising for scaled NAND flash memory beyond the sub-40-nm node, which utilizes the fringing electric field from control gates. In this work, we propose a new NAND string structure where cells have localized buried oxide layers (L-BOXs) and no S/D. The L-BOX is formed in the space between gates. When comparing the proposed cell string with the conventional cell string without the L-BOX, the former forms a field-induced layer more easily in the space, causing the threshold voltage in the space to decrease. Owing to not only the effect of the fringing field from the control gates (CGs) but also the additional effect due to the L-BOX, the proposed structure shows a wider threshold voltage window ($\Delta V_{\text{th}}$) and a higher bit-line current ($I_{\text{bitline}}$) during the read operation than the structure without the L-BOX when peak channel doping is uniform along the NAND string.

• 2009-06-25

著者

• Kim Young

  School Of Advanced Materials Science And Engineering Sungkyunkwan Univ.

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Cho Il-hwan

  Department Of Biotechnology Shinpoong Pharmaceutical Co. Ltd.

• Cho Il-Hwan

  Department of Electronic Engineering, College of Engineering, Myongji University, San 38-2 Nam-dong, Cheoin-gu, Yongin, Gyeonggi-do 449-728, Korea

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