Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

概要

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The impact ionization behavior of bulk fin field effect transistors (FinFETs) was investigated with respect to fin body width ($W_{\text{fin}}$) and bias conditions. As fin width decreases to less than about 50 nm, the effect of parasitic source/drain series resistance becomes significant, resulting in a decrease in the impact ionization rate due to the increasing voltage drop across the resistance. We analyzed the $I_{\text{SUB}}/I_{\text{D}}$ trend depending on the bias conditions ($V_{\text{GS}}=V_{\text{DS}}$ and $V_{\text{GS}}=V_{\text{DS}}/2$) for devices with a $W_{\text{fin}}$ thicker than 50 nm. Through two-dimensional device simulation, we showed the voltage drop and the peak electron temperature for various $W_{\text{fin}}$. It was also shown that the contact resistivity between the source/drain and the metal electrode is very important in the bulk FinFET with a very thin fin width.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-06-15