Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

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概要

• 論文の詳細を見る

• This paper investigates degradation/recovery behavior of 2.9nm-thick gate oxide integrity under negative/positive bias temperature instability stress. In addition to the typical NBTI mechanism that is attributed to interface defects, the precursor for oxide fixed charge is probably created in the bulk of the gate oxide, depending on process variations and extrinsic-defect levels. We suggest three kinds of bulk traps that have different de-trapping behaviors.

• 社団法人電子情報通信学会の論文
• 2005-06-21

著者

• LEE Jae

  Division of Cardiology, Asan Medical Center, University of Ulsan College of Medicine

• LEE Yong

  School of Electrical Engineering, Seoul National University

• LEE Jong

  School of Electrical Engineering, Seoul National University

• Lee Jong

  School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.

• Lee Jae

  Division Of Cardiology Asan Medical Center University Of Ulsan College Of Medicine

• Lee Jae-sung

  Division Of Information & Communication Engineering Uiduk University

• Lee Yong-hyun

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Lee Yong

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Lee Yong

  School Of Earth And Environmental Sciences Seoul National University

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Lee Yong

  School Of Bioscience And Biotechnology And Institute Of Bioscience And Biotechnology Kangwon Nationa

• Lee Jae

  Division Of Information & Communication Engineering Uiduk University

• Lee Jong-Ho

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

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