Monte Carlo Simulation of Single-Electron Nanocrystal Memories
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概要
- 論文の詳細を見る
We present a Monte Carlo simulation method for single-electron nanocrystal memories including the nanocrystal interdot effect, and show the simulation results obtained. A nanocrystal memory was modeled as a network of modified single-tunnel junctions for its program operation and as a network of channel resistances for simulating drain current to extract its threshold voltage. The results show that, in programming characteristics, device parameters have mutual trade-off relationships in the clearness of steplike single-charging features and in the magnitude of threshold voltage shifts. The presented method will be helpful for the design of single-electron nanocrystal memories.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Lee Jong
School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.
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Sim Jae
School Of Electrical Engineering & Inter-university Semiconductor Research Center (isrc) Seoul N
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KONG Jihye
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul Nati
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Kong Jihye
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
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Park Byung-Gook
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Sim Jae
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
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Park Byung-Gook
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
-
Lee Jong
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
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Park Byung-Gook
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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