Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory
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概要
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We characterized normalized noise power density (S_{\text{I}}/I_{\text{BL}}^{2}) and bit-line (BL) current fluctuation (\Delta I_{\text{BL}}) using traps generated applying cycling stress in 26 nm NAND flash memory. The \Delta I_{\text{BL}}, S_{\text{I}}/I_{\text{BL}}^{2}, and capture (\tau_{\text{c}}) and emission times (\tau_{\text{e}}) of random telegraph noise (RTN) were measured before and after cycling stress, respectively. With cycling stress, traps were generated, and S_{\text{I}}/I_{\text{BL}}^{2} and \Delta I_{\text{BL}} were increased significantly. The \tau_{\text{c}} and \tau_{\text{e}} of RTN after cycling stress are similar with to those before cycling stress. RTN was characterized in terms of the trap position in the three-dimensional space (x_{\text{T}}, y_{\text{T}}, and z_{\text{T}}) of the tunneling oxide and trap energy (E_{\text{T}}). three-dimensional technology computer-aided design (TCAD) simulation was used to determine the position of z_{\text{T}} through the effect of adjacent BL cells.
- 2013-04-25
著者
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Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
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Jeong Min-Kyu
School of Electrical Engineering and Computer Science, Kyungpook National University, Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Park Byung-Gook
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
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Han Kyung-Rok
R&D Division, SK Hynix Inc., Icheon, Gyeonggi 467-701, Korea
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Jo Bong-Su
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Kang Ho-Jung
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Joe Sung-Min
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Han Kyung-Rok
R&D Division, SK Hynix Inc., Icheon, Gyeonggi 467-701, Korea
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Park Sung-Kye
R&D Division, SK Hynix Inc., Icheon, Gyeonggi 467-701, Korea
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Park Byung-Gook
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Jeong Min-Kyu
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Lee Jong-Ho
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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