Jeong Min-Kyu | School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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概要
- Jeong Min-Kyuの詳細を見る
- 同名の論文著者
- School of EECS and ISRC, Seoul National University, Seoul 151-742, Koreaの論文著者
関連著者
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Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
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Jeong Min-Kyu
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Choi Byung-kil
School Of Electrical Engineering And Computer Science Kyungpook National Univ.
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Kwon Hyuck-in
School Of Eecs Kyungpook National University
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Jeong Min-Kyu
School of Electrical Engineering and Computer Science, Kyungpook National University, Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Lee Jong-Ho
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Cho Il
Department Of Biotechnology Chung-ang University
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Kwon Hyuck-In
School of Electric Engineering, Daegu University, Jillyang-eup, Gyeongsan, Gyeongbuk 712-714, Korea
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Park Byung-Gook
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
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Shin Hyungcheol
School of Electrical Eng.
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Han Kyung-Rok
R&D Division, SK Hynix Inc., Icheon, Gyeonggi 467-701, Korea
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Jo Bong-Su
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Kang Ho-Jung
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Joe Sung-Min
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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Han Kyung-Rok
R&D Division, SK Hynix Inc., Icheon, Gyeonggi 467-701, Korea
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Park Sung-Kye
R&D Division, SK Hynix Inc., Icheon, Gyeonggi 467-701, Korea
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Park Byung-Gook
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
著作論文
- Current Model of Fully Depleted Nanoscale Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel in All Operation Regions
- Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory
- Compact Current Modeling of Fully Depleted Symmetric Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Doped Short-Channel