Compact Current Modeling of Fully Depleted Symmetric Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Doped Short-Channel

概要

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The current behaviors of fully depleted (FD) symmetric double-gate (DG) metal–oxide–semiconductor field effect transistors (MOSFETs) with doped short-channel were parametrically modeled with the simple closed-form in all operational regions. In the diffusion current model, a physical parameter $D_{\text{G}}$ as a function of gate bias ($V_{\text{GS}}$), drain bias ($V_{\text{DS}}$), silicon body width ($W_{\text{B}}$), channel length ($L$), and channel doping concentration ($N_{\text{b}}$) was introduced to consider the $V_{\text{GS}}$ dependence. Also, the subthreshold slope (SS) of DG MOSFETs with doped channel was modeled accurately with $D_{\text{G}}$. $D_{\text{D}}$ which is dependent on $V_{\text{DS}}$ was introduced to consider the drain-induced barrier lowering (DIBL) in the diffusion current model. After the strong inversion, the drift current of doped DG MOSFETs was modeled by considering inversion-layer capacitance based on charge-sheet approximation. The channel length modulation by $V_{\text{DS}}$ was considered for accuracy in the current modeling of DG MOSFETs with doped short-channel. Our simple compact models predicted accurately DC characteristics of the devices with the channel length to 20 nm and shown good agreement with two-dimensional (2D) simulation.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-11-25