Device design of SONOS flash memory cell with saddle type channel structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• Saddle-type SONOS flash memory device with recess channel and side-gate was proposed and designed in terms of recess depth, doping profile, and side-gate length for sub-50 nm flash memory technology. The key features of the devices were characterized through 3-dimensional device simulation. This cell structure can store 2-bit or more in a cell when it is applied to NOR flash memory. It was shown that channel doping profile needs to be different depending on application (NOR or NAND). In NOR flash memory application, the localized channel doping under the source/drain junction is very important in designing V_<th> and suppression of DIBL. Although this cell structure was very useful in NOR flash memory application, we also studied device design of the cell for NAND flash application.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Jung Han-a-reum

  School Of Eecs Kyungpook National University

• Lee Jong‐ho

  Samsung Electronics Company Ltd.

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Jung Han‐a‐reum

  Kyungpook National Univ. Daegu Kor

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• Device design of SONOS flash memory cell with saddle type channel structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Device design of SONOS flash memory cell with saddle type channel structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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