Flash Memory Device with ‘I’ Shape Floating Gate for Sub-70 nm NAND Flash Memory
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概要
- 論文の詳細を見る
In this article, we proposed a novel ‘I’ shape floating gate applicable to the sub-70 nm flash memory cell with high performance and scalability. It has modified floating gate of conventional flash memory to have high coupling-ratio ($\mathit{CR}$), low effect of interference or cross-talk. Specifically, it has ${\sim}13$% higher $\mathit{CR}$ and ${\sim}33/46$% lower effect of cross-talk of the bit-line/word-line state than those of conventional flash memory cell with scale-downed geometry. In addition, ‘I’ shape flash memory cell shows improved characteristics about programming time, drain disturbance, read current, sub-threshold swing, and drain induced barrier lowering than conventional flash memory cell.
- Japan Society of Applied Physicsの論文
- 2006-11-25
著者
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Jung Sang-goo
School Of Electrical Engineering And Computer Science Kyungpook National Univ.
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Jung Sang-goo
School Of Electrical Engineering And Computer Science Kyungpook National University
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Lee Jong-ho
School Of Electrical Engineering And Computer Science Kyungpook National University
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Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
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Lee Jong-Ho
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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