Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function

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概要

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• We proposed a new body-tied triple-gate fin-type field-effect transistor (bulk FinFET) which has different gate work-functions on the top- and side-channel regions. The effect of gate work-function on the characteristics of the bulk FinFETs was studied by using three-dimensional device simulator. By increasing the top-gate work-function ($\Phi_{\text{TG}}$) at a fixed side-gate work-function ($\Phi_{\text{SG}}$) of the bulk FinFET, threshold voltage ($V_{\text{th}}$) increases and off-state leakage current ($I_{\text{off}}$) reduces significantly without increasing doping concentration of the fin body. The bulk FinFETs with the low body doping and the threshold voltage controlled by midgap-gate work-function shown very small dependence on the corner shape, but shown very poor short channel effect (SCE). It was also shown that devices with the $V_{\text{th}}$ controlled by body doping shows significant corner effect and the effect becomes small as the fin width decreases. By applying our approach, we could reduce the off-current by more than 10 times without increasing fin body doping concentration.

• 2008-06-25

著者

• Choi Byung-kil

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Kwon Hyuck-in

  School Of Eecs Kyungpook National University

• Han Kyoung-rok

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Kwon Hyuck-In

  School of Electronic Engineering, Daegu University, Gyeongsan, Gyeongsangbukdo 712-714, Korea

• Lee Jong-Ho

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

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