Device Design Consideration for 50nm Dynamic Random Access Memory Using Bulk FinFET

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• YOON Euijoon

  School of Materials Science and Engineering, Seoul National University

• Lee J‐h

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Lee Jong-ho

  School Of Electrical Engineering Wonkwang University

• Choi Byung-kil

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• HAN Kyoung-Rok

  School of Electrical Engineering and Computer Science, Kyungpook National Univ.

• PARK Tai-su

  School of Materials Science and Engineering, Seoul National University

• CHUNG In-Young

  Department of Electronic Engineering, Gyeongsang National University

• Park Tai-su

  School Of Materials Science And Engineering Seoul National University

関連論文

• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Invited Nitride Semiconductor Nanostructures and Their Optical Properties (先端デバイスの基礎と応用に関するアジアワークショップ)
• Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr_0.3,Ti_0.7)O_3 Thin Films for the Infra-Red Sensor Devices
• Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices
• 2-bit/cell Characteristics of High-Density and High-Performance SONOS Flash Memory Cell with Recessed Channel Structure
• Device Design Consideration for 50nm Dynamic Random Access Memory Using Bulk FinFET
• Possibility of TWO-Step As-Desorption from (001) InP Using Surface Photoabsorption : Surfaces. Interfaces, and Films
• Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
• Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
• Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)
• Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)
• Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
• Analytic oxide capacitance model of double- and surrounding-gate metal-oxide-semiconductor field-effect transistors in linear region by considering inversion-layer capacitance
• Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
• Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
• Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
• Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
• An Optomechanical Pressure Sensor Using Multimode Interference Couplers
• Time-Varying Body Instability and Low-Frequency Noise Characteristics of Mini-Field-Dual-Body Silicon-on-Insulator Structure for Analog-Digital Mixed-Mode Circuits
• AC Floating Body Effects and 1/f Noise Characteristics of Dual Body SOI Structure for Analog-Digital Mixed Mode Circuit
• Low Voltage Actuated RF MEMS Switches Using Push-Pull Operation
• An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers
• Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
• [Invited]Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• [Invited] Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006)
• Gate Workfunction Engineering of Bulk FinFETs for Sub-50nm DRAM Cell Transistors
• Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor
• Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function
• Current Model of Fully Depleted Nanoscale Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel in All Operation Regions
• Threshold-Voltage Modeling of Bulk Fin Field Transistors by Considering Surface Potential Lowering
• Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET
• Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias
• Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions
• Compact Current Modeling of Fully Depleted Symmetric Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Doped Short-Channel

もっと見る 閉じる

スポンサーリンク