Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-10-25
著者
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Lee Jong-ho
School Of Electrical Engineering Wonkwang University
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HAN Kyoung-Rok
School of Electrical Engineering and Computer Science, Kyungpook National Univ.
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Lee Jong-ho
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
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Lee Jong‐ho
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
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- Length effect of spacer-type storage node in high-density 2-bit/cell silicon-oxide-nitride-oxide-silicon NOR flash cell based on recessed channel structure
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- Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
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