Band-to-band hot-hole erase characteristics of 2-bit/cell NOR-type silicon-oxide-nitride-oxide-silicon flash memory cell with spacer-type storage node on recessed channel structure
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概要
著者
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Jung Han-a-reum
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
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Lee Jong-ho
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
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Lee Jong‐ho
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
関連論文
- Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
- Length effect of spacer-type storage node in high-density 2-bit/cell silicon-oxide-nitride-oxide-silicon NOR flash cell based on recessed channel structure
- Band-to-band hot-hole erase characteristics of 2-bit/cell NOR-type silicon-oxide-nitride-oxide-silicon flash memory cell with spacer-type storage node on recessed channel structure
- Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer