Length effect of spacer-type storage node in high-density 2-bit/cell silicon-oxide-nitride-oxide-silicon NOR flash cell based on recessed channel structure
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Jung Han-a-reum
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
-
Lee Jong-ho
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
-
Lee Jong‐ho
School Of Electrical Engineering Computer Science Kyungpook National University In Daegu
関連論文
- Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
- Length effect of spacer-type storage node in high-density 2-bit/cell silicon-oxide-nitride-oxide-silicon NOR flash cell based on recessed channel structure
- Band-to-band hot-hole erase characteristics of 2-bit/cell NOR-type silicon-oxide-nitride-oxide-silicon flash memory cell with spacer-type storage node on recessed channel structure
- Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer