Han Kyoung-rok | School Of Electrical Engineering And Computer Science Kyungpook National Univ.

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著作論文

2-bit/cell Characteristics of High-Density and High-Performance SONOS Flash Memory Cell with Recessed Channel Structure
Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor
Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function
Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET
Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions
Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure
Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
Length Effect of Spacer-Type Storage Node in High-Density 2-bit/Cell Silicon–Oxide–Nitride–Oxide–Silicon NOR Flash Cell Based on Recessed Channel Structure
Two-Bit/Cell Characteristics of Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Devices with Recessed Channel Structure

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