Yoon Euijoon | School Of Electronic And Electrical Engineering Kyungpook National University

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概要

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著作論文

Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Invited Nitride Semiconductor Nanostructures and Their Optical Properties (先端デバイスの基礎と応用に関するアジアワークショップ)
Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr_0.3,Ti_0.7)O_3 Thin Films for the Infra-Red Sensor Devices
Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices
Possibility of TWO-Step As-Desorption from (001) InP Using Surface Photoabsorption : Surfaces. Interfaces, and Films
Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
[Invited]Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
[Invited] Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET
Strong Room-Temperature Near-Ultraviolet Emission from In-Rich InGaN/GaN Nanostructures Grown by Metalorganic Chemical Vapor Deposition
Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces

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