Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)

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概要

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• Si epitaxial layers were selectively grown on local oxidation of silicon (LOCOS) patterned Si (100) substrates by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) under various growth conditions. The isotropic/anisotropic growth behavior of Si epitaxial layers was carefully analyzed and a new model is proposed, considering surface mass transport and the free energy change. As growth temperature increased and Si2H6 flow rate decreased, lateral overgrowth of Si was reduced, and the anisotropic selective epitaxial growth (SEG) of Si was enhanced. Depending on the growth conditions, the degree of lateral overgrowth and the growth rate of the (111) facet were changed with layer thickness, strongly suggesting that the mass transport process on the surface played an important role in the isotropic/anisotropic growth behavior. The proposed model explains our experimental observations and provides an improved understanding of the Si SEG behavior.

• 2003-06-15

著者

• Lim Seung-hyun

  School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc

• Song Sukchan

  School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc

• Lee Seung-yoon

  School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc

• Lee Gun-do

  School Of Materials Science And Engineering And Inter-university Semiconductor Research Center (isrc

• Yoon Euijoon

  School Of Electronic And Electrical Engineering Kyungpook National University

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Park Tai-su

  School Of Material Science Engineering Seoul National University

• Lim Seung-Hyun

  School of Materials Science and Engineering, and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Korea

• Lee Jong-Ho

  School of Electronic and Electrical Engineering, Kyungpook National University, Taegu 702-701, Korea

• Park Tai-su

  School of Materials Science and Engineering, and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Korea

• Song Sukchan

  School of Materials Science and Engineering, and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Korea

• Lee Jong-Ho

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

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