Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure

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概要

• 論文の詳細を見る

• A novel 2-bit/cell silicon–oxide–nitride–oxide–silicon (SONOS) flash memory device was proposed and characterized for 50 nm non-volatile memory (NVM) technology. The proposed memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The channel surface potential was shown to show internal physics with erasing time. Proposed memory cell has two surface potential peaks at source and drain sides.

• Japan Society of Applied Physicsの論文
• 2007-09-25

著者

• Jung Han-a-reum

  School Of Eecs Kyungpook National University

• Han Kyoung-rok

  School Of Electrical Engineering And Computer Science Kyungpook National Univ.

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Lee Jong-Ho

  School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea

関連論文

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