Enhancement of Temperature Sensitivity for Metal--Insulator--Semiconductor Temperature Sensors by Using Bi2Mg2/3Nb4/3O7 Film

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概要

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• Metal--insulator--semiconductor (MIS) type temperature sensors with Bi2Mg2/3Nb4/3O7 (BMNO) film are introduced to improve temperature detecting ability. The current gain of presented sensor is nearly 180 within 7--77 °C which is more than the double amount of current gain in previous work. Dielectric thickness dependency of sensor is also decreased comparing with previous sensor. Temperature detecting mechanisms were analyzed by current and temperature relationship. It was also shown that these sensors were reliable through the temperature cycling test.

• 2012-08-25

著者

• Lee Jae-min

  Department Of Electronic Materials Engineering Kwangwoon University

• Cho Il

  Department Of Biotechnology Chung-ang University

• Lee Jong-ho

  School Of Eecs Engineering Kyungpook National University

• Cho In-Tak

  School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea

• Yoon Soon-Gil

  School of Nano Science and Technology, Chungnam National University, Daeduk Science Town, Daejeon 305-764, Korea

• Yoon Soon-Gil

  School of Nano Science and Technology, Chungnam National University, Daejon 305-764, Republic of Korea

• Lee Jae-Min

  Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi 449-728, Republic of Korea

• Lee Jong-Ho

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

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