Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory
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概要
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A modified modeling of residue effect on nano-electro-mechanical nonvolatile memory (NEMory) is presented for considering wet etching process. The effect of a residue under the cantilever is investigated for the optimization. The feasibility of the proposed model is investigated by finite element analysis simulations.
著者
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Cho Il
Department Of Biotechnology Chung-ang University
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Choi Woo
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
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Han Min
Department Of Chemical And Biological Engineering Applied Rheology Center Korea University
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Han Boram
Department Of Electronic Engineering Sogang University
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SEO Dongsun
Department of Electronic Engineering, Myongji University
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HAN Min
Department of Electronic Engineering, Myongji University
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