Quantitative Analysis of Hump Effects of Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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The hump effect of gate-all-around (GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) has been analyzed quantitatively. The function $H(V_{\text{G}})$ is introduced to evaluate the hump magnitude of GAA MOSFETs by extracting threshold voltages of main and parasitic channels accurately. Based on simulation study, the effect of fin doping concentration, fin corner rounding and gate oxide thickness on the hump magnitude of GAA MOSFETs has been analyzed quantitatively, which presents the design guideline of GAA MOSFETs.
- 2010-04-25
著者
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LEE Woojun
Department of Electronic Engineering, Sogang University
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Choi Woo
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
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Woojun Lee
Department of Electronic Engineering, Sogang University, 1 Shinsu-dong, Mapo-gu, Seoul 121-742, Korea
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