Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)
スポンサーリンク
概要
- 論文の詳細を見る
Some nano-electromechanical (NEM) nonvolatile memory cells will be discussed such as NEMory cells, T cells and H cells. NEM nonvolatile memory cells are considered as alternative embedded nonvolatile memory cells because they have advantages of CMOS-compatible process, high packaging density, board space saving, low program / erase voltage, large sensing margin, low fabrication cost and short time-to-market. Since the first CMOS-compatible NEM nonvolatile memory (NEMory) cell was proposed, T cell has been proposed for 2-bit operation and H cell has been proposed for 4-bit operation.
- 社団法人電子情報通信学会の論文
- 2010-06-23
著者
-
Choi Woo
Department Of Electronic Engineering Sogang University
-
Choi Woo
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
関連論文
- New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells(Session 8A : Memory 2)
- New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells(Session 8A : Memory 2)
- Novel 1T DRAM Cell for Low-Voltage Operation and Long Data Retention Time
- Study on the Performance of Spiral-Grooved Semi-Spherical Air Bearings Using Taguchi Method
- Electrical Properties of Non-Crosslinked Polyethylene/Syndiotactic Polystyrene Composites Filled with Carbon Black
- Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)
- Effects of operating factors on the particle size distribution and particle shape of synthesized precipitated CaCO_3 : effect of reaction temperature, blowing rate of CO_2 gas and initial slurry concentration of Ca(OH)_2 on reaction completion time
- Stereo matching using hierarchical features for robotic applications
- Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)
- Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors
- Quantitative Analysis of Hump Effects of Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors
- Production of Transgenic Bovine Cloned Embryos Using Piggybac Transpositioin
- PSEUDOMELANOSIS ILEI ASSOCIATED WITH INGESTION OF CHARCOAL : CASE REPORT AND REVIEW OF LITERATURE
- Pulsed dye laser treatment for viral warts : A study of 120 patients
- Numerical Analysis of Stiffness of Self-Acting Air Bearings of Various Curvatures
- Effect of an Out-of-Sphericity Error on the Radial Stiffness of an Air Dynamic Bearing
- Characteristics of breast cancers detected by ultrasound screening in women with negative mammograms
- Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors
- Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)
- Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
- Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
- Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator
- Effect of Device Parameters on the Breakdown Voltage of Impact-Ionization Metal–Oxide–Semiconductor Devices
- L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
- Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory