Novel 1T DRAM Cell for Low-Voltage Operation and Long Data Retention Time
スポンサーリンク
概要
- 論文の詳細を見る
A novel one-transistor dynamic random access memory (1T DRAM) cell has been proposed for a low-voltage operation and longer data retention time. The proposed 1T DRAM cell has three features compared with a conventional 1T DRAM cell: low body doping concentration, a recessed gate structure, and a P+ poly-Si gate. Simulation results show that the proposed 1T DRAM cell has < 1-ns program time and > 100-ms data retention time under the condition of sub-1-V operating voltage.
著者
-
Choi Woo
Department Of Electronic Engineering Sogang University
-
LEE Woojun
Department of Electronic Engineering, Sogang University
-
KIM Kwangsoo
Sogang Institute of Advanced Technology (SIAT), Sogang University
関連論文
- New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells(Session 8A : Memory 2)
- New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells(Session 8A : Memory 2)
- Novel 1T DRAM Cell for Low-Voltage Operation and Long Data Retention Time
- Study on the Performance of Spiral-Grooved Semi-Spherical Air Bearings Using Taguchi Method
- Electrical Properties of Non-Crosslinked Polyethylene/Syndiotactic Polystyrene Composites Filled with Carbon Black
- Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)
- Effects of operating factors on the particle size distribution and particle shape of synthesized precipitated CaCO_3 : effect of reaction temperature, blowing rate of CO_2 gas and initial slurry concentration of Ca(OH)_2 on reaction completion time
- Stereo matching using hierarchical features for robotic applications
- Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1)
- Quantitative Analysis of Hump Effects of Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors
- Novel 1T DRAM Cell for Low-Voltage Operation and Long Data Retention Time
- Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)