Effect of Device Parameters on the Breakdown Voltage of Impact-Ionization Metal–Oxide–Semiconductor Devices
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概要
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The effect of device parameters on the breakdown voltage of impact-ionization metal–oxide–semiconductor (I-MOS) devices has been investigated. In order to realize I-MOS devices with sufficiently low breakdown voltage, we examined the downscaling of the device size and the introduction of narrow-bandgap material by using device simulation. The downscaling of the device size included the reduction of i-region length ($L_{\text{I}}$), source extension junction depth ($x_{\text{j,se}}$) and gate oxide thickness ($t_{\text{ox}}$). However, the acceptable breakdown voltage (${<}{-5}$ V) could not be achieved. Thus, narrow-bandgap material is necessary in addition to device scaling. A strained silicon-on-insulator (SSOI) substrate with sufficient bandgap reduction will meet the demands.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Choi Woo
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
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Choi Woo
Department of Electronic Engineering, Sogang University, 1 Shinsu-dong, Mapo-gu, Seoul 121-742, Korea
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CHOI WOO
Department of Chemical Engineering, Doshisha University
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