Characteristics of Gate-All-Around Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (Special Issue : Microprocesses and Nanotechnology)
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概要
著者
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Kang In
School Of Electrical Engineering Seoul National University
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Lee Jae
School Of Computer Science And Engineering Seoul National University
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CHOI WOO
Department of Chemical Engineering, Doshisha University
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