Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation

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概要

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• In this work, a high-performance compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (GaAs) heterojunction with a tunneling-boost layer is investigated. The tunneling-boost layer in the source-side channel alters the energy band-gap structure between the source and the channel, which affects current drivability considerably. It is shown that controlling the lengths of the boosting layer (thin n⁺GaAs layer) and lightly doped p-type channel (p-GaAs) also has substantial effects on adjusting V_{\text{th}} without complications arising from shifting metal workfunction. Furthermore, we evaluate device performances such as on-state current (I_{\text{on}}), subthreshold swing (S), intrinsic delay time (\tau), and cut-off frequency (f_{\text{T}}). The proposed TFET with an n-GaAs length of 12 nm showed an S of 27 mV/dec and approximately 3 times higher I_{\text{on}} than that of the device without a boosting layer. Moreover, it is confirmed from the extracted excellent radio-frequency (RF) parameters that the proposed device is suitable for RF applications.

• 2013-04-25

著者

• Kang In

  School Of Electrical Engineering Seoul National University

• Seo Jae

  School Of Computer And Electronics Engineering Keimyung University

• Yoon Young

  School Of Electrical & Electronic Engineering Yonsei University

• Lee Jung-Hee

  School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea

• Cho Seongjae

  Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.

• Park Byung-Gook

  Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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