Cho Seongjae | Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.
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概要
- Cho Seongjaeの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.の論文著者
関連著者
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Kang In
School Of Electrical Engineering Seoul National University
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Cho Seongjae
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Seo Jae
School Of Computer And Electronics Engineering Keimyung University
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Yoon Young
School Of Electrical & Electronic Engineering Yonsei University
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Shin Sunhae
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea
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Kim Kyung
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
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Cho Seongjae
Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4075, U.S.A.
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Shin Hyungcheol
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Shin Hyungcheol
School of Electrical Eng.
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Shin Sunhae
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea
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Kim Kyung
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea
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Park Byung-Gook
Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
著作論文
- Extraction of T-Type Substrate Resistance Components for Radio-Frequency Metal--Oxide--Semiconductor Field-Effect Transistors Based on Two-Port S-Parameter Measurement
- Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
- Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation