Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

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概要

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• In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal--oxide--semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y- and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y- and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime.

• 2013-04-25

著者

• Kang In

  School Of Electrical Engineering Seoul National University

• Shin Sunhae

  School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea

• Kim Kyung

  School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea

• Lee Jung-Hee

  School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea

• Cho Seongjae

  Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.

• Shin Sunhae

  School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea

• Kim Kyung

  School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea

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