Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film
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概要
- 論文の詳細を見る
Nickel silicide (NiSi) was formed by annealing a uniform low-resistivity nickel (Ni) film deposited by atomic layer deposition (ALD). A Ni film as-deposited at 220 °C exhibited the lowest sheet resistance of 18 $\Omega$/sq. comparable to that of the film obtained by physical vapor deposition, even though it contained a significant amount of carbon from the metalorganic precursor. It is believed that the carbon is uniformly distributed in the film by partly forming a weak Ni3C phase which eliminates other crystalline defects in the film and hence lowers the resistance of the film. However, the carbon was not observed at the Ni/Si interface and in the silicon bulk except at the film surface after the annealing to form silicide. The existence of carbon at the surface of the film causes the film to maintain a low-resistivity NiSi phase up to 800 °C, without the carbon at the surface, the phase of film is changed to the high-resistivity nickel disilicide (NiSi2) at such a high temperature. The deposition of Ni by ALD and the formation of low-resistivity NiSi with an increased temperature stability can be useful in fabricating advanced devices, such as nanometer scale complementally metal–oxide silicons (CMOSs) or three-dimensional (3-D) MOS devices like Fin-type field-effect transistors (Fin-FETs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Lee Jong-hyun
School Of Electrical Engineering And Computer Science Kyungpook National University
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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Lee Heon-bok
School Of Electrical Engineering And Computer Science Kyungpook National University
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Hahm Sung-ho
School Of Electrical Engineering & Computer Science Kyungpook National University
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Kwon Dae-hyuk
School Of Electronic And Information Engineering Kyungil University
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Cho Hyun-ick
School Of Electrical Engineering & Computer Science Kyungpook National University
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Kang Ik-su
School Of Electrical Engineering And Computer Science Kyungpook National University
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Kang Ik-Su
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Yang Chung-Mo
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370, Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Kong Sung-Ho
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370, Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Lee Jong-Hyun
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Do Kwan-Woo
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Kim Kyung-Min
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Back Kyoung-Hum
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Kwon Dae-Hyuk
School of Electronic Information and Communication Engineering, Kyungil University, 33 Buho-ri, Hayang-up, Gyeongsan-si, Gyeongsangbuk-do, Korea
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Cho Hyun-Ick
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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